When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...

The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

While contact gate pitch (GP) and fin pitch (FP) scaling continues to provide higher performance and lower power to finFET platforms, controlling RC parasitics and achieving higher transistor ...

How FinFET technology has changed power-consumption analysis. Steps involved in taking a hierarchical approach to performing proper power analysis. Verification expert Lauro Rizzatti recently ...

TOKYO & NEW YORK & SUNNYVALE, Calif. – 16 Dec 2008: Toshiba Corporation (TOKYO:6502), IBM (NYSE: IBM), and AMD (NYSE:AMD) today announced that they have together developed a Static Random Access ...