Imec and AIXTRON, the specialist in deposition equipment for compound semiconductor materials, have demonstrated epitaxial growth of GaN buffer layers qualified for 1200V applications on 200mm QST ...
Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...
Welsh fab equipment maker SPTS has teamed up with the Queensland Micro and Nanotechnology Facility (QMF) of Griffith University where researchers have spent 10 years developing an epitaxial SiC layer ...
Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...
Imec, the research and innovation hub, and AIXTRON, a provider of deposition equipment, have demonstrated epitaxial growth of gallium-nitride (GaN) buffer layers qualified for 1200V applications on ...
imec, the research and innovation hub and fabless technology innovator Qromis, have developed high performance p-GaN power devices on 200mm engineered Coefficient of Thermal Expansion (CTE)-matched ...
Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing the need for crystalline substrates in epitaxy (Nanowerk Spotlight) The ...
Leuven, Belgium. Today imec and fabless technology innovator Qromis announced the development of high-performance enhancement-mode p-GaN power devices on 200-mm engineered coefficient of thermal ...
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