EPC Launches Its First Seventh-Generation (Gen 7) eGaN® Power Transistor, the 40 V EPC2366, into Mass Production

EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...
Tech Xplore on MSN

Redefining GaN power devices for adoption in EVs and data centers

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN) power transistors, making them safer and easier to utilize in high-value ...
EDN

GaN power transistors take aim at MOSFETs

I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...
Electronics For You

GaN Power Devices For EV Electronics

An advanced gate design could reshape EV and data center power systems.
EDN

Advances in high power GaN HEMT transistors

Gallium nitride (GaN) HEMT based power transistors are fast becoming adopted for many high power amplifier applications from CW to pulsed or modulated requirements. The key advantage of GaN HEMT ...
Business Insider

GaN Systems Announces World’s Highest Current Rated GaN Power Transistor

OTTAWA, Feb. 28, 2018 (GLOBE NEWSWIRE) -- GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most ...
Electronic Design

GaN Transistors Up the Game in Reliability and Power Efficiency

Have you used gallium-nitride (GaN) transistors in your designs yet? If not, now may be the time to give it some consideration. GaN devices have been around for several years now, but improved ...
The Financial

Panasonic Develops Insulated-Gate GaN Power Transistor Capable of Continuous Stable Operation

The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...

IISc team reshapes GaN transistors to power next wave of EVs & data centres

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...
Business Wire

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...
Electronic Design

GaN Systems unveils 650 V GaN power transistors

OTTAWA, Ontario, Canada—GaN Systems, a global provider of GaN (gallium nitride) power semiconductors, has announced the industry’s highest current 650 V GaN E-HEMTs with the addition of the 150 A, 650 ...
Electronics Weekly

Arrow sells GaN power transistors

Arrow Electronics is now carrying the GaN Systems range of gallium nitride (GaN) transistors in Europe, Middle East and Africa (EMEA). Arrow Electronics is now carrying the GaN Systems range of ...