EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN) power transistors, making them safer and easier to utilize in high-value ...

EPC’s first Gen 7 eGaN power transistor, the 40-V EPC2366, delivers up to 3× better performance than equivalent silicon MOSFETs.

EPC's GaN Technology Strengthens Renesas' Market Presence in High-Volume Consumer and AI Power. Together, EPC and ...

An advanced gate design could reshape EV and data center power systems.

The Gallium Nitride Transistor Market has experienced substantial growth, advancing from USD 215.36 million in 2025 to USD 237.74 million in 2026, with projections to reach USD 387.63 million by 2032, ...

Nexperia has introduced four 40V bi-directional GaN power transistors. With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to ...

Arrow Electronics is now carrying the GaN Systems range of gallium nitride (GaN) transistors in Europe, Middle East and Africa (EMEA). Arrow Electronics is now carrying the GaN Systems range of ...

The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...

A research team has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in ...

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...

The U.S. power transistor market was valued at USD 3.10 billion in 2025 and is projected to reach USD 6.43 billion by 2035, expanding at a CAGR of 9.55%. Growth is fueled by rising EV adoption driving ...