To improve performance and reduce size, Hitachi Semiconductor (America) Inc. has introduced a power amplifier module that uses MOSFETs instead of gallium arsenide ICs. The 6mm2 MOSFET-based module has ...
The project was built around the Hitachi lateral power MOSFETs to create high fidelity Class AB amplifier. Most power MOSFETs use a vertical structure where the current flows vertically. The gate ...
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